NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Small Mini-Mold package EIAJ: SC-70

文件：57.84 Kbytes 页数：12 Pages

NEC

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SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件：189.1 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

NEC

瑞萨

SOT323

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上传：深圳市正纳电子有限公司

SOT343

RENESAS

瑞萨

上传：深圳市正纳电子有限公司