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2SC5182

NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59

文件:56.08 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5182

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif

文件:196.62 Kbytes 页数:21 Pages

NEC

瑞萨

2SC5182-T1

SILICON TRANSISTOR

NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件:187.63 Kbytes 页数:14 Pages

RENESAS

瑞萨

2SC5182-T1

NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59

文件:56.08 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5182-T2

NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59

文件:56.08 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5182-T2

SILICON TRANSISTOR

NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件:187.63 Kbytes 页数:14 Pages

RENESAS

瑞萨

2SC5183

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61

文件:190.23 Kbytes 页数:14 Pages

RENESAS

瑞萨

2SC5183

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif

文件:196.62 Kbytes 页数:21 Pages

NEC

瑞萨

2SC5183

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61

文件:60.61 Kbytes 页数:12 Pages

NEC

瑞萨

2SC518383R

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six dif

文件:196.62 Kbytes 页数:21 Pages

NEC

瑞萨

晶体管资料

  • 型号:

    2SC5178(R)

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    表面帖装型 (SMD)_SHF

  • 封装形式:

    贴片封装

  • 极限工作电压:

    5V

  • 最大电流允许值:

    0.01A

  • 最大工作频率:

    10.5GHZ

  • 引脚数:

    4

  • 可代换的型号:

    2SC4993,2SC5078,2SC5097,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-17

  • vtest:

    5

  • htest:

    10500000000

  • atest:

    0.01

  • wtest:

    0

供应商型号品牌批号封装库存备注价格
SOT-143
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
TOSHIBA
24+
60000
询价
23+
SOT143
98650
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
TOS
23+
TO
20000
正品原装货价格低
询价
NEC
24+
5000
只做原装公司现货
询价
NEC
1922+
SOT-323
35689
原装进口现货库存专业工厂研究所配单供货
询价
NEC
23+
SOT-323SC-70
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
20+
SOT-323
120000
只做原装 可免费提供样品
询价
NK/南科功率
2025+
SOT-323
986966
国产
询价
RENESAS/瑞萨
2511
SOT-323
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
更多2SC51供应商 更新时间2026-3-10 17:36:00