TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE

POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • High Transition Frequency: fT = 100 MHz (Typ.) • Complementary to 2SA1932

文件：172.04 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION • Silicon NPN epitaxial type • Low Collector Saturation Voltage • High transition frequency • Complementary to 2SA1932 • Good Linearity of hFE • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications •

文件：278.65 Kbytes 页数：2 Pages

ISC

无锡固电

NPN EPITAXIAL TYPE (HIHG CURRENT SWITCHING APPLICATIONS)

High-Current Switching Applications • Low collector-emitter saturation voltage: VCE (sat) = 0.4 V (max) (IC = 2.5 A, IB = 125 mA) • High-speed switching: tstg = 0.8 µs (typ.) Collector-base voltage VCBO 60V Collector-emitter voltage VCEO 50V Emitter-base voltage VEBO 5V

文件：143.69 Kbytes 页数：2 Pages

TOSHIBA

东芝

NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING, DC-DC CONVERTER APPLICATIONS)

HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATION

文件：223.36 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59

文件：56.93 Kbytes 页数：12 Pages

NEC

瑞萨

丝印：T84；SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Mini-Mold package EIAJ: SC-59

文件：187.69 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES • Low current consumption and high gain |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 4-pin Mini-Mold package EIAJ: SC-61

文件：82.02 Kbytes 页数：12 Pages

NEC

瑞萨

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件：190.71 Kbytes 页数：14 Pages

RENESAS

瑞萨

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

文件：205.16 Kbytes 页数：10 Pages

RENESAS

瑞萨