Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

文件：155.2 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.

文件：133.97 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SA1942 APPLICATIONS • Power amplifier applications • Recommended for 80W high fidelity audio frequency amplifier output stage

文件：137.46 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SA1942 APPLICATIONS • Power amplifier applications • Recommended for 80W high fidelity audio frequency amplifier output stage

文件：150.82 Kbytes 页数：4 Pages

SAVANTIC

SILICON NPN TRIPLE DIFFUSED TRANSISTOR

文件：196.4 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistor

文件：126.33 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件：190.28 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Triple Diffused Planar Transistor

文件：33.21 Kbytes 页数：1 Pages

SANKEN

三垦

Silicon NPN Triple Diffused Planar Transistor

文件：32.75 Kbytes 页数：1 Pages

SANKEN

三垦