It is an ultra-high-frequency low-noise transistor, using planar NPN silicon outside

Description 2SC3356 is an ultra-high frequency low-noise transistor, using planar NPN silicon outside. Extended bipolar process. It has high power gain, low noise figure, large dynamic range and ideal current characteristics. Use SOT-23/SC-59 SMD package, mainly used in VHF, UHF and CATV hi

文件：785.7 Kbytes 页数：5 Pages

LEIDITECH

雷卯电子

NPN Silicon RF Transistor

NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz

文件：189.37 Kbytes 页数：9 Pages

RENESAS

瑞萨

丝印：R24；Package：SC-59；NPN Silicon RF Transistor

FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain

文件：1.33099 Mbytes 页数：5 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：R25；Package：SC-59；NPN Silicon RF Transistor

FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain

文件：1.33099 Mbytes 页数：5 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN Silicon Plastic Encapsulated Transistor

FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain

文件：349.79 Kbytes 页数：2 Pages

SECOS

喜可士

General Purpose Transistor

Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.

文件：134.19 Kbytes 页数：4 Pages

COMCHIP

典琦

General Purpose Transistor

Features - Low noise and high gain. - High power gain. - Designed for low noise amplifier.

文件：134.19 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：R23；Package：SOT23-3L；NPN Transistors

Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：485.28 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：R23；Package：SOT23；NPN Transistors

Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：1.21418 Mbytes 页数：4 Pages

EVVOSEMI

翊欧

丝印：R24；Package：SOT23；NPN Transistors

Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：1.21418 Mbytes 页数：4 Pages

EVVOSEMI

翊欧