NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF

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RENESAS

瑞萨

NPN Silicon RF Transistor

NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold * Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz * High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz

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RENESAS

瑞萨

High-Frequency Amplifier Transistor NPN Silicon

FEATURES * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain

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WEITRON

Silicon Epitaxial Planar Transistor

FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.

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BILIN

银河微电

SOT-23

High-Frequency Amplifier Transistor

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GSME

桂微

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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HTSEMI

金誉半导体

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.

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ISC

无锡固电

NPN Silicon Epitaxial Transistor

Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

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KEXIN

科信电子

丝印：R23；Package：SOT-23；MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High

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NEC

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER

HIGH FREQUENCY LOW NOISE AMPLIFIER ■ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. r

文件：105.49 Kbytes 页数：3 Pages

UTC

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