NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold

NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA,

文件：1.74726 Mbytes 页数：9 Pages

CEL

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low noise and high power gain. Applications low noise amplifier at VHF, UHF and CATV band applications.

文件：614.94 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Low Noise and High Gain

DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0

文件：860.9 Kbytes 页数：4 Pages

YEASHIN

亚昕科技

NPN Transistors

Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：1.21418 Mbytes 页数：4 Pages

EVVOSEMI

翊欧

NPN Transistors

Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：485.28 Kbytes 页数：4 Pages

YFWDIODE

佑风微

NPN Silicon RF Transistor

FEATURES • Low noise amplifier at VHF, UHF and CATV band. • Low Noise and High Gain • High Power Gain

文件：1.33099 Mbytes 页数：5 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：128.69 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：54.83 Kbytes 页数：1 Pages

MAKOSEMI

美科半导体

NPN Silicon Plastic-Encapsulate Transistor

FEATURES • Power Dissipation • RoHS Compliant Product

文件：251.6 Kbytes 页数：3 Pages

SECOS

喜可士

丝印：R23/R24/R25；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.

文件：1.06194 Mbytes 页数：2 Pages

LUGUANG

鲁光电子