Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switching applications

文件：131.26 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION · With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switching applications

文件：106.61 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emiiter Sustaining Voltage-: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications.

文件：244.51 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

For high-frequency amplification/oscillation/mixing ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● High transition frequency fT.

文件：45.85 Kbytes 页数：3 Pages

Panasonic

松下

HIGH FREQUENCY LOW NOISE AMPLIFIER

HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES * Low Noise and High Gain * High Power Gain

文件：107.61 Kbytes 页数：3 Pages

UTC

友顺

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

文件：102.15 Kbytes 页数：8 Pages

NEC

瑞萨

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • High Power Gain MAG= 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS • Designe

文件：314.85 Kbytes 页数：6 Pages

ISC

无锡固电

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF

文件：248.21 Kbytes 页数：10 Pages

RENESAS

瑞萨

NPN Silicon Epitaxial Transistor

■ ABSTRACT The 2SC3355 is a silicon epitaxial transistor in NPN configuration. This high frequency, low noise amplifier boasts a high power gain. The transistor is encased in a compact three pin durable plastic TO-92 package.

文件：438.25 Kbytes 页数：1 Pages

AMMSEMI

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low noise and high power gain. Applications low noise amplifier at VHF, UHF and CATV band applications.

文件：920.81 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子