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2SC3352

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switching applications

文件:131.26 Kbytes 页数:3 Pages

ISC

无锡固电

2SC3352

Silicon NPN Power Transistors

DESCRIPTION · With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switching applications

文件:106.61 Kbytes 页数:3 Pages

SAVANTIC

2SC3353

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emiiter Sustaining Voltage-: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications.

文件:244.51 Kbytes 页数:2 Pages

ISC

无锡固电

2SC3354

Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

For high-frequency amplification/oscillation/mixing ■ Features ● Optimum for high-density mounting. ● Allowing supply with the radial taping. ● High transition frequency fT.

文件:45.85 Kbytes 页数:3 Pages

PANASONIC

松下

2SC3355

HIGH FREQUENCY LOW NOISE AMPLIFIER

HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES * Low Noise and High Gain * High Power Gain

文件:107.61 Kbytes 页数:3 Pages

UTC

友顺

2SC3355

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

文件:102.15 Kbytes 页数:8 Pages

NEC

瑞萨

2SC3355

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • High Power Gain MAG= 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS • Designe

文件:314.85 Kbytes 页数:6 Pages

ISC

无锡固电

2SC3355

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 12V(Min) · High Power Gain · Low Noise and High Gain APPLICATIONS · VHF · UHF · CATV

文件:341.05 Kbytes 页数:2 Pages

ISC

无锡固电

2SC3355

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF

文件:248.21 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SC3355

NPN Silicon Epitaxial Transistor

■ ABSTRACT The 2SC3355 is a silicon epitaxial transistor in NPN configuration. This high frequency, low noise amplifier boasts a high power gain. The transistor is encased in a compact three pin durable plastic TO-92 package.

文件:438.25 Kbytes 页数:1 Pages

AMMSEMI

晶体管资料

  • 型号:

    2SC3357

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    超高频/特高频 (UHF)

  • 封装形式:

    直插封装

  • 极限工作电压:

    20V

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    6.5GHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SC3607,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-100

  • vtest:

    20

  • htest:

    6500000000

  • atest:

    0.1

  • wtest:

    0

技术参数

  • ptot(W):

    1.2

  • IC(A):

    0.1

  • Vcbo(V):

    20

  • Vceo(V):

    12

  • Vebo(V):

    3

  • Icbo(uA):

    1

  • Icbo(V):

    10

  • Vce(sat)(V):

    10

  • Vce(sat)Ic(mA):

    20

  • hFE:

    50-300

  • hFEvce(v):

    10

  • hFEIc(mA):

    20

  • ftVce(v):

    10

  • ftIc/Ie(mA):

    7

  • PackageOutline:

    SOT-89

  • Arrays:

    BCE

供应商型号品牌批号封装库存备注价格
NEC
23+
SOT89
28650
主营品牌深圳百分百原装现货假一罚十绝对价优
询价
NEC
25+
SOT-89
6500
专注原装芯片21年 一手货源 样品免费送
询价
NEC
14+/15+
SOT-89
79520
询价
NEC
17+
SOT89
100000
RF丝印,原装现货,假一罚十
询价
NEC
15+
SOT-89
11560
全新原装,现货库存,长期供应
询价
24+
2000
全新
询价
NEC
13+
NA
19238
原装分销
询价
時科
24+
SOT-89
5000
全现原装公司现货
询价
NEC
24+
SOT89
2286
进口原装正品优势供应
询价
NEC
24+
SOT89
18700
询价
更多2SC335供应商 更新时间2026-10-18 14:08:00