2SC3355-T数据手册供应价格瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SC3355-T	文件：248.21 Kbytes Page：10 Pages	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz NF 文件：248.21 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SC3355-T	文件：293.26 Kbytes Page：10 Pages	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 文件：293.26 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SC3355-T92-B	文件：82.99 Kbytes Page：2 Pages	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：82.99 Kbytes 页数：2 Pages	UTC 友顺	UTC
2SC3355-T92-K	文件：82.99 Kbytes Page：2 Pages	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：82.99 Kbytes 页数：2 Pages	UTC 友顺	UTC
2SC3355-T92-R	文件：82.99 Kbytes Page：2 Pages	HIGH FREQUENCY LOW NOISE AMPLIFIER 文件：82.99 Kbytes 页数：2 Pages	UTC 友顺	UTC

型号：
2SC3355-T
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

更多2SC3355-T供应商更新时间2025-10-9 15:58:00