丝印：R23；Package：SOT-23；MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High

文件：102.57 Kbytes 页数：8 Pages

NEC

瑞萨

丝印：R23；Package：SOT23-3L；NPN Transistors

Features ● Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ● High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：485.28 Kbytes 页数：4 Pages

YFWDIODE

佑风微电子

丝印：R23；Package：SOT23；NPN Transistors

Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

文件：1.21418 Mbytes 页数：4 Pages

EVVOSEMI

翊欧

丝印：R23；Package：SOT-23；500mA/50V Digital transistor (with built-in resistors)

文件：1.08964 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：R23；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

文件：102.91 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：R23/R24/R25；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz ● High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ● Designed for low noise amplifier at VHF,UHF and CATV band.

文件：1.06194 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

Gate valve

文件：251.77 Kbytes 页数：2 Pages

GIACOMINI

嘉科米尼

R SERIES SNAP-IN ROCKER SWITCHES

文件：99.5 Kbytes 页数：2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Best in class performance, reliability and serviceability for HPC and Datacenter applications

文件：1.75886 Mbytes 页数：2 Pages

Intel

英特尔

Gate valve

文件：251.77 Kbytes 页数：2 Pages

GIACOMINI

嘉科米尼