2SC3356

Marking：R23；Package：SOT-23；MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DESCRIPTION The2SC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES •LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0GHz •High

2SC3356-R23

Marking：R23；Package：SOT23；NPN Transistors

Features Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz

2SC3356-R23

Marking：R23；Package：SOT23-3L；NPN Transistors

Features ●Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz

DTD143ECHZG

Marking：R23；Package：SOT-23；500mA/50V Digital transistor (with built-in resistors)

MMBTSC3356Q

Marking：R23；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

2SC3356

Marking：R23/R24/R25；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband.