2SC3356D

Marking：R25；Package：SC-59；NPN Silicon RF Transistor

FEATURES •LownoiseamplifieratVHF,UHFandCATVband. •LowNoiseandHighGain •HighPowerGain

2SC3356-R25

Marking：R25；Package：SOT23-3L；NPN Transistors

Features ●Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz

2SC3356-R25

Marking：R25；Package：SOT23；NPN Transistors

Features Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz

2SC4226C

Marking：R25；Package：SOT-323；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

2SC4226D

Marking：R25；Package：SOT-323；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

2SC4226E

Marking：R25；Package：SOT-323；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

FJV3105RMTF

Marking：R25；Package：SOT-23；NPN Epitaxial Silicon Transistor

Description Transistorswithbuilt-inresistorscanbeexcellentspace-andcost-savingsolutionsbyreducingcomponentcountandsimplifyingcircuitdesign. Features •100mAOutputCurrentCapability •Built-inBiasResistor(R1=4.7kΩ,R2=10kΩ) Application •Switching,Interface,and

2SC3356AC

Marking：R25；Package：SC-59；NPN SILICON RF TRANSISTOR

2SC3356KC

Marking：R25；Package：SC-59；NPN Silicon RF Transistor

2SC3356KD

Marking：R25；Package：SC-59；NPN Silicon RF Transistor