2SC3356B

Marking：R24；Package：SC-59；NPN Silicon RF Transistor

FEATURES •LownoiseamplifieratVHF,UHFandCATVband. •LowNoiseandHighGain •HighPowerGain

2SC3356-R24

Marking：R24；Package：SOT23-3L；NPN Transistors

Features ●Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz

2SC3356-R24

Marking：R24；Package：SOT23；NPN Transistors

Features Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz

2SC4226A

Marking：R24；Package：SOT-323；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

2SC4226B

Marking：R24；Package：SOT-323；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

FTC3356

Marking：R24；Package：SOT-23；HIGH-Frequency Amplifier Transistor

DESCRIPTION TheFTC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES •LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0GHz •High

FTC3356U

Marking：R24；Package：SC-70；HIGH-Frequency Amplifier Transistor

DESCRIPTION TheFTC3356UisanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES ​​​​​​​•WedeclarethatthematerialofproductcompliancewithRoHSrequirements. •LowNoiseandHighG

2SC3356AB

Marking：R24；Package：SC-59；NPN SILICON RF TRANSISTOR

2SC3356KB

Marking：R24；Package：SC-59；NPN Silicon RF Transistor

2SC3356L-B

Marking：R24；Package：SOT-23；GENERAL PURPOSE TRANSISTOR, NPN SILICON RF TRANSISTOR