Epitaxial Planar PNP Silicon Transistor

@ Features 1) Large collector power dissipation: Po=30W (Te=25°C) 2) Wide ASO. 3) Complementary pair with 25D1761. 4) Easily insulated from the heat dis- sipation plate as the fin is molded.

文件：279.59 Kbytes 页数：3 Pages

ROHM

罗姆

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1761 ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications

文件：134.6 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1761 ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications

文件：159.38 Kbytes 页数：3 Pages

JMNIC

锦美电子

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low VCE(sat). ● Complements the 2SD1766

文件：1.20419 Mbytes 页数：4 Pages

JIANGSU

长电科技

丝印：BC*；Package：SOT-89；Medium power transistor

FEATURES ● Low VCE(SAT)=-0.5V(Typ.) (IC/IB=-2A/-0.2A). ● Complementary the 2SD1766. APPLICATIONS ● Epitaxial planar type. ● PNP silicon transistor.

文件：177.12 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR(PNP)

FEATURES ● Low VCE(sat). ● Complements the 2SD1766

文件：327.11 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

Epitaxial Planar PNP Transistors

Epitaxial Planar PNP Transistors P/b Lead(Pb)-Free

文件：128.24 Kbytes 页数：5 Pages

WEITRON

Medium power transistor (32V, 2A)

Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor

文件：180.38 Kbytes 页数：4 Pages

ROHM

罗姆

Medium power transistor (32V, 2A)

Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor

文件：180.38 Kbytes 页数：4 Pages

ROHM

罗姆

Medium power Transistor(
32V,
2A)

Features 1) Low VCE(sat). VCE(sat) =
0.5V (Typ.) (IC / IB =
2A /
0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

文件：134.9 Kbytes 页数：4 Pages

ROHM

罗姆