Power Transistor (-60V, -3A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. ● Structure Epitaxial planar type PNP silicon transistor

文件：129.36 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation votlage • Complement to type 2SD1762 APPLICATIONS • For use in low frequency power amplifer applications

文件：141.31 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation votlage • Complement to type 2SD1762 APPLICATIONS • For use in low frequency power amplifer applications

文件：115.08 Kbytes 页数：3 Pages

SAVANTIC

丝印：2SB1185；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector Saturation Voltage Complement to Type 2SD1762 APPLICATIONS For Use in Low Frequency Power Amplifier Applications

文件：1.08115 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：108.87 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：64.53 Kbytes 页数：1 Pages

TEL

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1763 ·High breakdown voltage APPLICATIONS ·For use in low frequency power amplifer applications

文件：115.31 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) • Good Linearity of hFE • Complement to Type 2SD1763 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications.

文件：128.37 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印：EF；Package：TO-220FP；Power Transistor

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763

文件：43.82 Kbytes 页数：1 Pages

ROHM

罗姆