Silicon PNP epitaxial planar type darlington

Silicon PNP epitaxial planar type darlington For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipm

文件：102.66 Kbytes 页数：4 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type darlington

Silicon PNP epitaxial planar type darlington For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipm

文件：102.66 Kbytes 页数：4 Pages

PANASONIC

松下

丝印：T100；Power Transistor

Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.

文件：80.41 Kbytes 页数：3 Pages

ROHM

罗姆

Power Transistor (??0V, ??A)

Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.

文件：92.25 Kbytes 页数：3 Pages

ROHM

罗姆

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC=-0.1A APPLICATIONS · Inverters · Motor Controls

文件：277.14 Kbytes 页数：2 Pages

ISC

无锡固电

Medium power Transistor(
32V,
2A)

Features 1) Low VCE(sat). VCE(sat) =
0.5V (Typ.) (IC / IB =
2A /
0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

文件：134.9 Kbytes 页数：4 Pages

ROHM

罗姆

Medium Power Transistor

FEATURES ● Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ● Complements the 2SD1758 APPLICATIONS ● Epitaxial planar type. ● PNP silicon transistor.

文件：176.71 Kbytes 页数：4 Pages

BILIN

银河微电

isc Silicon PNP Power Transistor

DESCRIPTION • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power dissipation

文件：329.06 Kbytes 页数：3 Pages

ISC

无锡固电

TO-252-2L(4R) Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power Dissipation

文件：1.36409 Mbytes 页数：4 Pages

JIANGSU

长电科技

Medium power transistor (-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. ● Structure Epitaxial planar type PNP silicon transistor

文件：180.38 Kbytes 页数：4 Pages

ROHM

罗姆