PNP Silicon Epitaxial Transistors

Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1

文件：441.89 Kbytes 页数：4 Pages

MCC

MEDIUM POWER TRANSISTOR(-32V, -2A)

文件：538.33 Kbytes 页数：11 Pages

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PNP Silicon Epitaxial Transistors

Features ● Low Collector Saturation Voltage ● Execllent current-to-gain characteristics ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1

文件：441.89 Kbytes 页数：4 Pages

MCC

Medium power transistor (32V,2A)

Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.

文件：116.67 Kbytes 页数：4 Pages

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Darlington connection for high DC current gain.

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

文件：59.62 Kbytes 页数：1 Pages

ROHM

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isc Silicon PNP Power Transistor

DESCRIPTION • Low VCE(sat) • Small and slim package • Complements the 2SD1760/2SD1864 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power dissipation

文件：333.09 Kbytes 页数：3 Pages

ISC

无锡固电

Power transistor

Features ● Low VCE(sat). ● PNP silicon transistor. ● Epitaxial planar type

文件：39.87 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP Plastic Encapsulated Transistor

FEATURES ● Designed for general ● Low VCE(sat)

文件：76.58 Kbytes 页数：1 Pages

SECOS

喜可士

PNP PLASTIC ENCAPSULATE TRANSISTORS

Features: * Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)

文件：470.55 Kbytes 页数：4 Pages

WEITRON

Power Transistor (-60V, -3A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. ● Structure Epitaxial planar type PNP silicon transistor

文件：129.36 Kbytes 页数：3 Pages

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