2SB1182-R

PNP Silicon Epitaxial Transistors

Features ●LowCollectorSaturationVoltage ●Execllentcurrent-to-gaincharacteristics ●EpoxymeetsUL94V-0flammabilityrating ●MoistureSensitivityLevel1

2SB1182-R

PNP Silicon Epitaxial Transistors

2SB1182-R-TP

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 32V 2A DPAK

2SB1182

Mediumpowertransistor(-32V,-2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

2SB1182

MediumpowerTransistor(
32V,
2A)

Features 1)LowVCE(sat). VCE(sat)=
0.5V(Typ.) (IC/IB=
2A/
0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M.

2SB1182

TO-252-2L(4R)Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES PowerDissipation

2SB1182

Mediumpowertransistor(32V,2A)

Mediumpowertransistor(−32V,−2A) Features 1)LowVCE(sat). VCE(sat)=−0.5V(Typ.) (IC/IB=−2A/−0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor

2SB1182

Mediumpowertransistor(32V,2A)

Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complements2SD1758/2SD1862.

2SB1182

MEDIUMPOWERLOWVOLTAGETRANSISTOR

DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage

2SB1182

MediumPowerTransistor

FEATURES ●LowVCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ●Complementsthe2SD1758 APPLICATIONS ●Epitaxialplanartype. ●PNPsilicontransistor.