MEDIUM POWER LOW VOLTAGE TRANSISTOR

■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage

文件：54.11 Kbytes 页数：4 Pages

UTC

友顺

MEDIUM POWER TRANSISTOR(-32V, -2A)

文件：538.33 Kbytes 页数：11 Pages

ROHM

罗姆

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -2A • Collector-base voltage: V(BR)CBO

文件：217.97 Kbytes 页数：2 Pages

MCC

丝印：BCR*；Package：SOT-89；PNP Transistors

Features ● Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)

文件：603.73 Kbytes 页数：4 Pages

YFWDIODE

佑风微

Medium power transistor (32V, 2A)

Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor

文件：180.38 Kbytes 页数：4 Pages

ROHM

罗姆

Medium power transistor (32V, 2A)

Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor

文件：180.38 Kbytes 页数：4 Pages

ROHM

罗姆

MEDIUM POWER LOW VOLTAGE TRANSISTOR

■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage

文件：54.11 Kbytes 页数：4 Pages

UTC

友顺

MEDIUM POWER TRANSISTOR(-80V, -0.7A)

[ROHM] Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：38.76 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：42.27 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：T100；Package：MPT3；Medium power transistor (-80V, -0.7A)

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：69.82 Kbytes 页数：3 Pages

ROHM

罗姆