丝印：2SAR583D3；Package：TO-252；PNP -7A -50V Power Transistor

Features 1) Suitable for Power Driver. 2) Complementary NPN Types : 2SCR583D3 FRA. 3) Low VCE(sat) VCE(sat)=-400mV(Max.). (IC/IB=-3A/-150mA) Application LOW FREQUENCY AMPLIFIER

文件：1.636 Mbytes 页数：9 Pages

ROHM

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丝印：2SAR583D3；Package：TO-252；PNP -7A -50V Power Transistor

文件：1.73895 Mbytes 页数：11 Pages

ROHM

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丝印：2SAR583D3；Package：TO-252；PNP -7A -50V Power Transistor

Features 1) Suitable for Power Driver. 2) Complementary NPN Types : 2SCR583D3 FRA. 3) Low VCE(sat) VCE(sat)=-400mV(Max.). (IC/IB=-3A/-150mA) Application LOW FREQUENCY AMPLIFIER

文件：1.636 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：2SAR583D3；Package：TO-252；PNP -7A -50V Power Transistor

文件：1.73895 Mbytes 页数：11 Pages

ROHM

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isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-emitter breakdown voltage : BVCEO= -50V(Min) ·High DC Current Gain : hFE= 180-450@ (VCE= -3V, IC= -1A) ·Low Saturation Voltage : VCE(sat)= -0.35V(Max)@ (IC= -3A, IB= -0.15A) ·Complement to Type 2SCR583D3 ·Minimum Lot-to-Lot variations for robust device performance a

文件：332.58 Kbytes 页数：2 Pages

ISC

无锡固电