丝印：2SCR583D3；Package：TO-252；NPN 7A 50V Power Transistor

Features 1) Suitable for Power Driver. 2) Complementary PNP Types : 2SAR583D3 FRA. 3) Low VCE(sat) VCE(sat)=350mV(Max.).　(IC/IB=3A/150mA) Application LOW FREQUENCY AMPLIFIER

文件：1.64169 Mbytes 页数：9 Pages

ROHM

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丝印：2SCR583D3；Package：TO-252；NPN 7A 50V Power Transistor

文件：1.74305 Mbytes 页数：11 Pages

ROHM

罗姆

丝印：2SCR583D3；Package：TO-252；NPN 7A 50V Power Transistor

Features 1) Suitable for Power Driver. 2) Complementary PNP Types : 2SAR583D3 FRA. 3) Low VCE(sat) VCE(sat)=350mV(Max.).　(IC/IB=3A/150mA) Application LOW FREQUENCY AMPLIFIER

文件：1.64169 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：2SCR583D3；Package：TO-252；NPN 7A 50V Power Transistor

文件：1.74305 Mbytes 页数：11 Pages

ROHM

罗姆

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-emitter breakdown voltage : BVCEO= 50V(Min) ·High DC Current Gain : hFE= 180-450@ (VCE= 3V, IC= 1A) ·Low Saturation Voltage : VCE(sat)= 0.35V(Max)@ (IC= 3A, IB= 0.15A) ·Complement to Type 2SAR583D3 ·Minimum Lot-to-Lot variations for robust device performance and rel

文件：332.76 Kbytes 页数：2 Pages

ISC

无锡固电