丝印：2STC4793；Package：TO-220FP；NPN power bipolar transistor

Description This device is a NPN transistor manufactured using new “PB-HDC” (power bipolar high density current) technology. The resulting transistor shows good gain linearity behavior. Features ■ High breakdown voltage VCEO = 230 V ■ Complementary to 2STA1837 ■ High transition frequency

文件：143.27 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

丝印：2STC4793；Package：TO-220FP；NPN power bipolar transistor

Description This device is a NPN transistor manufactured using new “PB-HDC” (power bipolar high density current) technology. The resulting transistor shows good gain linearity behavior. Features ■ High breakdown voltage VCEO = 230 V ■ Complementary to 2STA1837 ■ High transition frequency

文件：143.27 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体