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BZX884S-B13

Marking:2T;Package:DFN1006BD-2;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BZX884S-B13-Q

Marking:2T;Package:DFN1006BD-2;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

KST4403

Marking:2T;Package:SOT-23;Switching Transistor

SwitchingTransistor

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT4403

Marking:2T;Package:SOT-23;TRANSISTOR (PNP)

FEATURES EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable (MMBT4401) IdealforMediumPowerAmplificationand Switching

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

MMBT4403

Marking:2T;Package:SOT-23;PNP General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailable (MMBT4401). ●Alsoavailableinleadfreeversion. ●Idealformediumpoweramplificationandswitching. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MMBT4403

Marking:2T;Package:SOT-23;PNP General Purpose Amplifier

Description Thisdeviceisdesignedforuseasageneral-purposeamplifierandswitchforcollectorcurrentsto500mA.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT4403

Marking:2T;Package:SOT-23;PNP General Purpose Amplifier

Description Thisdeviceisdesignedforuseasageneral-purposeamplifierandswitchforcollectorcurrentsto500mA.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PBSS4112PANP

Marking:2T;Package:DFN2020-6;120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

1.1Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4112PAN.PNP/PNPcomplement:PBSS5112PAP. 1.2Featuresandbenefits •Verylowcolle

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4112PANP-Q

Marking:2T;Package:DFN2020-6;120 V, 1 A NPN/PNP low VCEsat transistor

1.Generaldescription NPN/PNPlowVCEsattransistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4112PAN-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapa

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PEMB30

Marking:2T;Package:SOT666;PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

1.1Generaldescription PNP/PNPdoubleResistor-EquippedTransistors(RET)inSurface-MountedDevice(SMD) plasticpackages 1.2Features 1.3Applications Table1.Productoverview TypenumberPackageNPN/PNP complement NPN/NPN NXPJEITAcomplement PEMB30SOT666-PEMD30PEMH30 PUMB30SO

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

晶体管资料

  • 型号:

    2T201

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Ge-PNP

  • 性质:

    调频 (FM)

  • 封装形式:

  • 极限工作电压:

    15V

  • 最大电流允许值:

    0.002A

  • 最大工作频率:

    100MHZ

  • 引脚数:

  • 可代换的型号:

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    NO

  • vtest:

    15

  • htest:

    100000000

  • atest:

    0.002

  • wtest:

    0

供应商型号品牌批号封装库存备注价格
WILLSEMI
23+
SOT723
15000
全新原装现货,价格优势
询价
Agilent
23+
16000
现货库存
询价
ON/安森美
23+
1230+
6500
专注配单,只做原装进口现货
询价
ON/安森美
23+
1230+
6500
专注配单,只做原装进口现货
询价
LRC/乐山
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
MAXIM/美信
09+
1000
进口原装现货假一赔万力挺实单
询价
LRC/乐山
24+
NA/
4480
原装现货,当天可交货,原型号开票
询价
SYLVANIA
2022+
14
全新原装 货期两周
询价
Davies
22+
NA
489
加我QQ或微信咨询更多详细信息,
询价
美国HONEYWELL
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多2T供应商 更新时间2025-5-8 16:47:00