BZX884S-B13

Marking：2T；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-B13-Q

Marking：2T；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

KST4403

Marking：2T；Package：SOT-23；Switching Transistor

SwitchingTransistor

MMBT4403

Marking：2T；Package：SOT-23；TRANSISTOR (PNP)

FEATURES EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable (MMBT4401) IdealforMediumPowerAmplificationand Switching

MMBT4403

Marking：2T；Package：SOT-23；PNP General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailable (MMBT4401). ●Alsoavailableinleadfreeversion. ●Idealformediumpoweramplificationandswitching. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

MMBT4403

Marking：2T；Package：SOT-23；PNP General Purpose Amplifier

Description Thisdeviceisdesignedforuseasageneral-purposeamplifierandswitchforcollectorcurrentsto500mA.

MMBT4403

Marking：2T；Package：SOT-23；PNP General Purpose Amplifier

Description Thisdeviceisdesignedforuseasageneral-purposeamplifierandswitchforcollectorcurrentsto500mA.

PBSS4112PANP

Marking：2T；Package：DFN2020-6；120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

1.1Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4112PAN.PNP/PNPcomplement:PBSS5112PAP. 1.2Featuresandbenefits •Verylowcolle

PBSS4112PANP-Q

Marking：2T；Package：DFN2020-6；120 V, 1 A NPN/PNP low VCEsat transistor

1.Generaldescription NPN/PNPlowVCEsattransistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4112PAN-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapa

PEMB30

Marking：2T；Package：SOT666；PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

1.1Generaldescription PNP/PNPdoubleResistor-EquippedTransistors(RET)inSurface-MountedDevice(SMD) plasticpackages 1.2Features 1.3Applications Table1.Productoverview TypenumberPackageNPN/PNP complement NPN/NPN NXPJEITAcomplement PEMB30SOT666-PEMD30PEMH30 PUMB30SO