丝印：2T；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2T；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2T；Package：SOT-23；Switching Transistor

Switching Transistor

文件：57.29 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：2T；Package：SOT-23；PNP General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available (MMBT4401). ● Also available in lead free version. ● Ideal for medium power amplification and switching. APPLICATIONS ● Ideal for medium power amplification and switching.

文件：193.13 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：2T；Package：SOT-23；PNP General Purpose Amplifier

Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA.

文件：42.8 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：2T；Package：SOT-23；PNP General Purpose Amplifier

Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA.

文件：71.81 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：2T；Package：SOT-23；TRANSISTOR (PNP)

FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) Ideal for Medium Power Amplification and Switching

文件：1.59155 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：2T；Package：DFN2020-6；120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP. 1.2 Features and benefits • Very low colle

文件：854.28 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2T；Package：DFN2020-6；120 V, 1 A NPN/PNP low VCEsat transistor

1. General description NPN/PNP low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capa

文件：358.15 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2T；Package：SOT666；PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages 1.2 Features 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement NPN/NPN NXP JEITA complement PEMB30 SOT666 - PEMD30 PEMH30 PUMB30 SO

文件：191.09 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司