丝印：2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.41169 Mbytes 页数：33 Pages

TI

德州仪器

丝印：2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.4574 Mbytes 页数：38 Pages

TI

德州仪器

丝印：2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.66176 Mbytes 页数：43 Pages

TI

德州仪器

丝印：2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1%: 1 μs • Excellent CMRR: 166 dB • Acc

文件：2.66187 Mbytes 页数：43 Pages

TI

德州仪器

丝印：J3001；Package：SOT-223；P-Channel MOSFET

文件：816.04 Kbytes 页数：6 Pages

KEXIN

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文件：151.61 Kbytes 页数：5 Pages

KEXIN

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丝印：A1*；Package：SOT-23-3；P-Channel Enhancement MOSFET

文件：154.31 Kbytes 页数：4 Pages

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丝印：A1*；Package：SOT-23-3；P-Channel Enhancement MOSFET

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丝印：A9*；Package：SOt-23-3；P-Channel Enhancement MOSFET

文件：193.24 Kbytes 页数：4 Pages

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丝印：39W**；Package：SOT-163；P Channel MOSFET

文件：447.15 Kbytes 页数：4 Pages

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