丝印：2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.41169 Mbytes 页数：33 Pages

TI

德州仪器

丝印：2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.4574 Mbytes 页数：38 Pages

TI

德州仪器

丝印：2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.66176 Mbytes 页数：43 Pages

TI

德州仪器

丝印：2SJ3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1%: 1 μs • Excellent CMRR: 166 dB • Acc

文件：2.66187 Mbytes 页数：43 Pages

TI

德州仪器

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：656.76 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：651.81 Kbytes 页数：10 Pages

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -14A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= -10V · Isolated TO-220 Package APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.32 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -14A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.12Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.84 Kbytes 页数：2 Pages

ISC

无锡固电

P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

* 4 V gate drive * Low drain−source ON resistance : RDS (ON)= 80 mΩ(typ.) * High forward transfer admittance : |Yfs| = 8.0 S (typ.) * Low leakage current : IDSS= −100 µA (max) (VDS= −60 V) * Enhancement−mode : Vth= −0.8~−2.0 V (VDS= −10 V, ID= −1mA)

文件：280.59 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝