丝印：2STA1837；Package：TO-220FP；PNP power bipolar transistor

Description This device is a PNP transistor manufactured using new “PB-HDC” (power bipolar high density current) technology. The resulting transistor shows good gain linearity behavior. Features ■ High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequenc

文件：143.59 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

丝印：2STA1837；Package：TO-220FP；PNP power bipolar transistor

Description This device is a PNP transistor manufactured using new “PB-HDC” (power bipolar high density current) technology. The resulting transistor shows good gain linearity behavior. Features ■ High breakdown voltage VCEO = -230 V ■ Complementary to 2STC4793 ■ High transition frequenc

文件：143.59 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体