丝印：2SD1762；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complements the 2SB1185

文件：1.3627 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：2SD1762；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complements the 2SB1185

文件：1.3627 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

文件：153.28 Kbytes 页数：4 Pages

ROHM

罗姆

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications

文件：110.91 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications

文件：136.3 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件：112.51 Kbytes 页数：3 Pages

SAVANTIC

TO-220-3L Plastic-Encapsulate Transistors

文件：322.92 Kbytes 页数：2 Pages

JIANGSU

长电科技