丝印：2SD3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.41169 Mbytes 页数：33 Pages

TI

德州仪器

丝印：2SD3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.4574 Mbytes 页数：38 Pages

TI

德州仪器

丝印：2SD3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.66176 Mbytes 页数：43 Pages

TI

德州仪器

丝印：2SD3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.66187 Mbytes 页数：43 Pages

TI

德州仪器

丝印：2SD313；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507

文件：1.02553 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：2SD313；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507

文件：1.02553 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHIGN, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

HIGH SPEED, HIGH CURRENT SWITCHIGN APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

文件：141.15 Kbytes 页数：2 Pages

TOSHIBA

东芝

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A ● DC Current Gain hFE=40~320@IC=1A ● Complementray to PNP 2SB507

文件：605.08 Kbytes 页数：2 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.75 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：126.14 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low Current Low Voltage. Applications Low frequency power amplifier applications.

文件：610.01 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子