丝印：2SD3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.41169 Mbytes 页数：33 Pages

TI

德州仪器

丝印：2SD3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.4574 Mbytes 页数：38 Pages

TI

德州仪器

丝印：2SD3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.66176 Mbytes 页数：43 Pages

TI

德州仪器

丝印：2SD3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.66187 Mbytes 页数：43 Pages

TI

德州仪器

丝印：2SD313；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507

文件：1.02553 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：2SD313；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507

文件：1.02553 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Dual-Channel High-quality and SCALE™-2 Driver Core

Applications IGBTs up to 1700V

文件：227.43 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

Dual-Channel High-quality and SCALE™-2 Driver Core

Applications IGBTs up to 1700V

文件：227.43 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

Dual-Channel High-quality and SCALE™-2 Driver Core

Applications IGBTs up to 1700V

文件：227.72 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

Dual-Channel High-quality and SCALE™-2 Driver Core

Applications IGBTs up to 1700V

文件：227.72 Kbytes 页数：7 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司