2SAR583D3FRA

Marking：2SAR583D3；Package：TO-252；PNP -7A -50V Power Transistor

Features 1)SuitableforPowerDriver. 2)ComplementaryNPNTypes:2SCR583D3FRA. 3)LowVCE(sat) VCE(sat)=-400mV(Max.).(IC/IB=-3A/-150mA) Application LOWFREQUENCYAMPLIFIER

2SAR583D3FRATL

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PNP, TO-252 (DPAK), -50V -7A, PO

Rohm Semiconductor

2SAR583D3

iscSiliconPNPPowerTransistor

DESCRIPTION ·Collector-emitterbreakdownvoltage :BVCEO=-50V(Min) ·HighDCCurrentGain :hFE=180-450@(VCE=-3V,IC=-1A) ·LowSaturationVoltage :VCE(sat)=-0.35V(Max)@(IC=-3A,IB=-0.15A) ·ComplementtoType2SCR583D3 ·MinimumLot-to-Lotvariationsforrobustdevice performancea

2SAR583D3

PNP-7A-50VPowerTransistor