丝印：2SC3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.41169 Mbytes 页数：33 Pages

TI

德州仪器

丝印：2SC3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.4574 Mbytes 页数：38 Pages

TI

德州仪器

丝印：2SC3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.66176 Mbytes 页数：43 Pages

TI

德州仪器

丝印：2SC3；Package：SOT-23-THIN；INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.66187 Mbytes 页数：43 Pages

TI

德州仪器

丝印：LE/LF/LG；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Low collector to emitter saturation voltage. ● Excellent linearity of DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● For hybrid IC,small type machine low frequency voltage amplify application.

文件：1.08908 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

丝印：LE；Package：SOT-23；Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

文件：2.23809 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：LF；Package：SOT-23；Excellent linearity of DC forward current gain

FEATURES Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)

文件：2.23809 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

HF Amp Applications?

HF Amplifier Applications Features • FBET series. • Very small-sized package permitting sets to be small sized and slim. • High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ).

文件：109.54 Kbytes 页数：4 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)

UHF BAND POWER AMPLIFIER APPLICATIONS ● Output Power : Po=3W (Min.) (f=470MHz, VCC=12.6V, Pi=.0.4W)

文件：115.22 Kbytes 页数：2 Pages

TOSHIBA

东芝

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

[Toshiba] High Current Switching Application High Speed DC-DC Converter Application

文件：149.48 Kbytes 页数：3 Pages

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