2SC3052F

丝印：LF；Package：SOT-23；Excellent linearity of DC forward current gain

FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA)

2SC3052F

Transistors;

2SC3052

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

2SC3052

SiliconEpitaxialPlanarTransistor

FEATURES ●Lowcollectortoemittersaturationvoltage. ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●ForhybridIC,smalltypemachinelowfrequencyvoltageamplifyapplication.

2SC3052

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:0.15W(Tamb=25℃) CollectorcurrentICM:0.2A Collector-basevoltageV(BR)CBO:50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

2SC3052

SiliconEpitaxialPlanarTransistor

FEATURES ●Lowcollectortoemittersaturationvoltage. ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●ForhybridIC,smalltypemachinelowfrequencyvoltageamplifyapplication.

2SC3052

NPNSiliconPlastic-EncapsulateTransistor

FEATURE •ExcellentlinearityofDCforwardcurrentgain. •LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax.(@IC=100mA,IB=10mA)

2SC3052

NPNTransistor

Features ●Collectorcurrent:IC=0.2A ●Powerdissipation:PC=0.15W

2SC3052

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SC3052

LOWFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE

DESCRIPTION 2SC3052isaminipackageresinsealedsiliconNPNepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. FEATURE ●Smallcollectortoemittersaturationvoltage.VCE(sat)=0.3Vmax（@Ic=100mA,IB=10mA） ●ExcellentlinearityofDCforwardgain. ●Superminipacka