2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapaci

2N7002E

N-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp

2N7002E

N-ChannelEnhanceentModeFieldEffectTransistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002E

SmallSignalMOSFET60V,310mA,Single,N?묬hannel,SOT??3

Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoH

2N7002E

N-CHANNELENHANCEMENT-MODEMOSFET

Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage

2N7002E

SmallSignalMOSFET

2N7002E

SuperhighdensecelldesignforlowRDS(ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

2N7002E

N-CHANNELENHANCEMENT

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR •LowOn-Resistance •FastSwitchingSpeed •Low-voltagedrive •Easilydesigneddrivecircuits •Pb-FreePackageisavailable. •Canprotectagainststaticelectricity1KVwhen theproductisinuse. •AEC-Q101Pass

2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low