2N7002-CAR

N-ChannelEnhancementModeFieldEffect

TransistorFeatures •HighdensitycelldesignforlowRDS(ON)•Voltagecontrolledsmallsignalswitching•Highsaturationcurrentcapability•Highspeedswitching•-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable

2N7002CK

60V,0.3AN-channelTrenchMOSFET

Generaldescription ESDprotectedN-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Features ●Logic-levelcompatible ●Veryfastswitching ●TrenchMOSFETtechnology ●ESDprotect

2N7002CSM

N-CHANNELENHANCEMENTMODEMOSTRANSISTOR

2N7002D

60VN-ChannelMOSFET

2N7002DCSM

DUALN-CHANNELENHANCEMENTMODEMOSTRANSISTOR

2N7002DSPT

DualN-ChannelEnhancementMOSFET

2N7002DW

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N7002DW

60VN-ChannelEnhancementModeMOSFET

2N7002DW

60VN-ChannelEnhancementModeMOSFET

DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re

2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •Lo