DUAL N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

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SEME-LAB

MOSFETs and JFETs

TT Electronics

Dual N-Channel Enhancement MOS FET

文件：246.6 Kbytes 页数：5 Pages

CHENMKO

力勤

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Lo

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DIODES

美台半导体

Dual N-Channel MOSFET

Features: * Low On-Resistance : 7.5 Ω * Low Input Capacitance: 22PF * Low Out put Capacitance : 11PF * Low Threshole :1 .5V(TYE) * Fast Switching Speed : 11ns Mechanical Data: * Case: SOT-363, Molded Plastic * Case Material-UL Flammability Rating 94V-0 * Terminals: Solderable per MIL-STD-

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WEITRON