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2N7002DW-TP

N-Channel MOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Ruggedandreliable •Voltagecontrolledsmallsignalswitch •OperatingJunctionTemperature:-55to+

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:3 •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:7.5ns •LowInputandOutputLeakage •ComplianttoRoHSDirective2002/95/EC BENEFITS •LowOffsetVoltage •Low-Vo

VishayVishay Siliconix

威世科技威世科技半导体

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapaci

DIODESDiodes Incorporated

美台半导体

2N7002E

N-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

2N7002E

N-ChannelEnhanceentModeFieldEffectTransistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

2N7002E

SmallSignalMOSFET60V,310mA,Single,N?묬hannel,SOT??3

Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoH

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2N7002E

N-CHANNELENHANCEMENT-MODEMOSFET

Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

2N7002E

SmallSignalMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2N7002E

SuperhighdensecelldesignforlowRDS(ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

FCIFirst Components International

戈采戈采企业股份有限公司

详细参数

  • 型号:

    2N7002DW-TP

  • 功能描述:

    MOSFET Dual N-CH 60V 115mA

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
MCC
25+
SOT363
17655
原装现货 欢迎来电咨询
询价
MCC
24+
SOT-363
7500
询价
MCC
2018+
SOT363
6528
承若只做进口原装正品假一赔十!
询价
MCC/美微科
22+
SOT363
39940
原装正品现货
询价
Micro
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MCC/美微科
22+
SOT363
20000
保证原装正品,假一陪十
询价
MCC(美微科)
2447
SOT-363
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
MICRO
1809+
SOT-363
3675
就找我吧!--邀您体验愉快问购元件!
询价
MCC/美微科
21+
SOT-363
2900
只做原装正品,不止网上数量,欢迎电话微信查询!
询价
MCC
24+
SOT363
64580
原装现货假一赔十
询价
更多2N7002DW-TP供应商 更新时间2025-6-30 13:24:00