丝印：LP-；Package：SOT-23；60 V, 0.3 A N-channel Trench MOSFET

General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology ● ESD protect

文件：83.83 Kbytes 页数：13 Pages

恩XP

60 V, 0.3 A N-channel Trench MOSFET

文件：83.83 Kbytes 页数：13 Pages

PHI

PHI

60 V, 0.3 A N-channel Trench MOSFET

ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • ESD protection up to 3 kV\n• Logic-level compatible\n• Trench MOSFET technology\n• Very fast switching\n• AEC-Q101 qualified;

Nexperia

安世

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

文件：14.46 Kbytes 页数：2 Pages

SEME-LAB

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Lo

文件：66.24 Kbytes 页数：3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation MOSFET has been designed to minimize the on state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power management functions • Battery

文件：85.79 Kbytes 页数：3 Pages

DIODES

美台半导体