2N7002_

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002_NL

N-ChannelEnhancementModeFieldEffectTransistor

2N7002A

NCHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •HighdensitycelldesignforlowRDS(ON). •Voltagecontroolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

2N7002A

FIELDEFFECTTRANSISTOR

2N7002A

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, makingitidealforhighefficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •N-Cha

2N7002A

NCHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002A

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002A-HF

MOSFET

Features -TrenchpowerMVMOSFETtechnology. -Voltagecontrolledsmallsignalswitch. -Lowinputcapacitance. -Fastswitchingspeed. -Lowinput/outputleakage.

2N7002AK

N-ChannelEnhancementMOSFET

HighSpeedSwitchingApplications ESDprotectedgate LowON-resistance RDS(on)=2.8Ω(typ.)(@VGS=10V) RDS(on)=3.1Ω(typ.)(@VGS=5V) RDS(on)=3.2Ω(typ.)(@VGS=4.5V)

2N7002AKQB-Q

60V,N-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1110D-3 (SOT8015)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •ExtendedtemperaturerangeTj=175