丝印：702；Package：SOT-23；N-Channel Small Signal MOSFET

文件：116.48 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

TAS5622-TAS5624DDVEVM

文件：3.51654 Mbytes 页数：33 Pages

TI

德州仪器

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Diodes

美台半导体

60 V, 300 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. • Suitable for logic level gate drive sources\n• Very fast switching\n• Surface-mounted package\n• Trench MOSFET technology;

Nexperia

安世

Small Signal MOSFET

• Enhancement mode\n• Avalanche rated\n• Normal level, logic level, super logic level or ultra logic level\n• V GS(th) = 2.1 ... 4.0V\n• Pb-free lead plating; RoHS compliant\n\n优势:;

Infineon

英飞凌

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage

文件：63.29 Kbytes 页数：3 Pages

DIODES

美台半导体

60 V, 300 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology Features and benefits ● Suitable for logic level gate drive sources ● Very fast switching ● Surface-mounted package ● Trench MOSFET technology Applications ● Log

文件：159.74 Kbytes 页数：13 Pages

恩XP

丝印：7002A；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：603.85 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Cha

文件：154.02 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：WB；Package：SOT-23；N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：561.25 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)