N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：383.82 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Voltage controlled small signal switch

MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：1.49074 Mbytes 页数：2 Pages

DGNJDZ

南晶电子

N-Channel Enhancement Mode MOSFET

Feature ● 60V/0.5A, RDS(ON) = 7500mΩ(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7500mΩ(MAX) @VGS = 4.5V. Id = 0.2A ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOT-23 for Surface Mount Package. Applications ● Power Management in Desktop C

文件：153.75 Kbytes 页数：3 Pages

ZPSEMIZP Semiconductor

至尚臻品

MOSFET (N-Channel)

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：486.19 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

Small Signal MOSFET Transistor

FEATURES ● High Density Cell Design For Low RDS(ON)。 ● Voltage Controlled Small Switch. ● Rugged and Reliable. ● High Saturation Current Capability. APPLICATIONS ● N-channel enhancement mode effect transistor. ● Switching application.

文件：253.32 Kbytes 页数：4 Pages

MAKOSEMI

美科半导体

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. Applications Intended for use in general purpose switching and phase control applications.

文件：901.72 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：12；Package：SOT23；60 V, 300 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits  Suitable for logic level gate drive sources  Very fast switching  Surface-mounted package  Trench MOSFET technology 1.3 Appl

文件：855.83 Kbytes 页数：13 Pages

NEXPERIA

安世

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage Mechanical Data • Case: SOT-23, Molded Plastic • Terminals: Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking: K

文件：91.32 Kbytes 页数：2 Pages

YIXIN

壹芯微

N-Channel Enhancement MOSFET

Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：433.46 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Mosfets

N-Channel MOSFET FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

文件：382.64 Kbytes 页数：4 Pages

HOTTECH

合科泰