N-Channel 60-V (D-S) MOSFET

⦁ Low On-Resistance: 2.5 Ω ⦁ Low Threshold: 2.1 V ⦁ Low Input Capacitance: 22 pF ⦁ Fast Switching Speed: 7 ns ⦁ Low Input and Output Leakage

文件：64.519 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

N-Channel Enhancement-Mode MOS Transistor

DESCRIPTION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown (BV) and low on-resistance are important.

文件：24.81 Kbytes 页数：2 Pages

Calogic

丝印：3P*；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signa

文件：148.68 Kbytes 页数：6 Pages

UTC

友顺

丝印：WA；Package：SOT-23；FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.

文件：70.63 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

丝印：702；Package：SOT-23；N-CHANNEL ENHANCEMENT-MODE MOSFET

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is an N-Channel enhancement-mode MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

文件：80.02 Kbytes 页数：2 Pages

Central

N-Channel Enhancement Mode Field Effect Transistor

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：474.45 Kbytes 页数：5 Pages

CET

华瑞

丝印：K72；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitanc

文件：55.51 Kbytes 页数：3 Pages

DIODES

美台半导体

N-Channel Enchanncement-Mode Mos Transistor

N-CHANNEL ENCHANNCEMENT-MODE MOS TRANSISTOR Description ​​​​​​​SOT-23

文件：228.34 Kbytes 页数：3 Pages

FCI

富加宜

N-Channel MOSFET

Features • Halogen free available upon request by adding suffix -HF · • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Advanced Trench Process Technology • High Input Impedance • High Speed Switching • CMOS Logic Compatible Input • Marking : 7002/S72 · ·

文件：174.87 Kbytes 页数：5 Pages

MCC

丝印：7002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.115A RDS(ON)

文件：529.58 Kbytes 页数：7 Pages

RECTRON

丽正国际