零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
60 V, 290 mA N-channel Trench MOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT416(SC-75) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDprote | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
60 V, 340 mA dual N-channel Trench MOSFET Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallSOT666Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
60V Dual N-Channel Enhancement Mode MOSFET Features ●Fastswitching ●GreenDeviceAvailable ●Suitfor1.5VGateDriveApplications | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | |||
60 V, 340 mA dual N-channel Trench MOSFET 1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallSOT666 Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •ESD | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
60 V, 310 mA N-channel Trench MOSFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology E | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
60 V, 310 mA N-channel Trench MOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDpro | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
60 V, 0.3 A N-channel Trench MOSFET Generaldescription ESDprotectedN-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Features ●Logic-levelcompatible ●Veryfastswitching ●TrenchMOSFETtechnology ●ESDprotect | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •Lo | DIODESDiodes Incorporated 达尔科技 | |||
Dual N-Channel MOSFET Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:11ns MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD- | WEITRONWEITRON 威堂電子科技 | |||
Plastic-Encapsulated Transistors MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
60V N-Channel Enhancement Mode MOSFET DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
OptiMOS??Small-Signal-Transistor Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Small Signal MOSFET SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–363 | SECOS SeCoS Halbleitertechnologie GmbH | |||
300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-Channel MOSFET Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Ruggedandreliable •Voltagecontrolledsmallsignalswitch •OperatingJunctionTemperature:-55to+ | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
Dual N-Channel MOSFET ■Features ●VDS(V)=60V ●ID=115mA(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SOT-363 Plastic-Encapsulate MOSFETs DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
Dual N-channel MOSFET DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
Plastic-Encapsulate MOSFETs DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 |
详细参数
- 型号:
2N7002
- 功能描述:
MOSFET N-CHANNEL 60V 115mA
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NS |
1806+ |
SOT-23 |
1231 |
进口原装现货,欢迎来询,价格优势 |
询价 | ||
NXP |
18+ |
SOT-23 |
54000 |
只做原装正品,卖元器件不赚钱交个朋友! |
询价 | ||
NEXPERIA |
21+ |
N/A |
300000 |
全新原现 |
询价 | ||
NXP |
15+ |
SOT23 |
30000 |
全新原装 |
询价 | ||
2015+ |
50 |
公司现货库存 |
询价 | ||||
2015+ |
50 |
公司现货库存 |
询价 | ||||
FSC |
15+ |
SOT23 |
24326 |
做原装正品 |
询价 | ||
PHI |
0611+ |
SOT23 |
1012 |
原装正品现货假一罚十 |
询价 | ||
ON |
17+18+ |
SOT23 |
488459 |
原厂原装,本地现货库存,假一罚十! |
询价 | ||
长电 |
11+ |
SOT23 |
50000 |
深圳现货 |
询价 |
相关规格书
更多- 2N7002,215
- 2N7002/G
- 2N7002_R1_00001
- 2N7002-7-F
- 2N7002A-7
- 2N7002BK,215
- 2N7002BKM,315
- 2N7002BKMB.315
- 2N7002BKS,115
- 2N7002BKV,115
- 2N7002CK,215
- 2N7002DW
- 2N7002DW-7-F
- 2N7002DWA-7
- 2N7002DWH6327
- 2N7002DWH6327XTSA1
- 2N7002DW-TP
- 2N7002E,215
- 2N7002EPT
- 2N7002E-T1-E3
- 2N7002ET1G
- 2N7002F,215
- 2N7002G
- 2N7002H6327
- 2N7002K
- 2N7002K/BKN
- 2N7002K-7
- 2N7002KDW
- 2N7002KT/R
- 2N7002KT1G
- 2N7002K-T1-GE3
- 2N7002KW
- 2N7002LT1
- 2N7002LT1G/BKN
- 2N7002LT3G
- 2N7002P,215
- 2N7002P,235
- 2N7002PS,115
- 2N7002PS,125
- 2N7002PV,115
- 2N7002PW,115
- 2N7002S
- 2N7002T/BKN
- 2N7002-T1-E3
- 2N7002-T1-GE3
相关库存
更多- 2N7002.215
- 2N7002_D87Z
- 2N7002-7
- 2N7002-7-GIGA
- 2N7002A-RTK/P
- 2N7002BK,215
- 2N7002BKMB,315
- 2N7002BKS,115
- 2N7002BKT,115
- 2N7002BKW,115
- 2N7002CK,215
- 2N7002DW_R1_00001
- 2N7002DW-7-F/BKN
- 2N7002DWH63=WR1
- 2N7002DWH6327XT
- 2N7002DWQ-7-F
- 2N7002E
- 2N7002E-7-F
- 2N7002E-T1
- 2N7002ET1G
- 2N7002E-T1-GE3
- 2N7002F,215
- 2N7002-G
- 2N7002H6327XTSA2
- 2N7002K,215
- 2N7002K_R1_00001
- 2N7002K-7/BKN
- 2N7002K-RTK/P
- 2N7002K-T1-E3
- 2N7002KT1G
- 2N7002K-TP
- 2N7002L
- 2N7002LT1G
- 2N7002LT3G
- 2N7002MTF
- 2N7002P,215
- 2N7002P.215
- 2N7002PS,115
- 2N7002PT,115
- 2N7002PW,115
- 2N7002R-02-7
- 2N7002T
- 2N7002-T1
- 2N7002-T1-E3-CUTTAPE
- 2N7002T-7-F