2N7002

N-Channel MOSFET

Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability Drain-SourcevoltageVDS60V DrainCurrentID115mA PowerDissipationPD225mW

2N7002

NCE N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES ●VDS=60V,ID=0.115A RDS(ON)

2N7002

Marking：WA；Package：SOT-23；FIELD EFFECT TRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapablity.

2N7002

N-channel vertical D-MOS transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. Productavailability:2N7002inSOT23. Features TrenchMOS™technology Veryfastswitching Logiclevelcompatible Subminiaturesurfacemountpackage. Applic

2N7002

N-Channel MOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF· •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •AdvancedTrenchProcessTechnology •HighInputImpedance •HighSpeedSwitching •CMOSLogicCompatibleInput •Marking:7002/S72 ··

2N7002

Plastic-Encapsulated Transistors

FEATURES Powerdissipation PD:0.35W(Tamb=25℃) Draincurrent ID:250mA Drain-Sourcevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N7002

Marking：3P；Package：SOT-23；Small Signal MOSFET Transistor

SmallSignalMOSFETTransistor FEATURES ●HighDensityCellDesignForLowRDS(ON)。 ●VoltageControlledSmallSwitch. ●RuggedandReliable. ●HighSaturationCurrentCapability. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication.

2N7002

OptiMOS??Small-Signal-Transistor

OptiMOSSmall-Signal-Transistor Features •N-channel •Enhancementmode •Logiclevel •Avalancherated •fastswitching •Pb-freelead-plating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

2N7002

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

2N7002

Marking：7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE *HighdensitycelldesignforlowRDS(ON) *Voltagecontrolledsmallsignalswitch *Ruggedandreliable *Highsaturationcurrentcapability