2N7002

Marking：F2；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

AP66200FVBW-13

Marking：F2；Package：U-QFN4040-16/SWP；3.8V TO 60V INPUT, 2A LOW IQ SYNCHRONOUS BUCK CONVERTER

Features -VIN3.8to60V -2AContinuousOutputCurrent -VOUTAdjustablefrom0.8Vto50V -EnhancedEfficiencyModewithBias -AdjustableSwitchingFrequency.500kHzDefaultFrequency -Start-upwithPre-biasedOutput -ExternalSoft-StartwithTracking–Sequential,Ratiometric,or Ab

BAS21AW

Marking：F2；Silicon Epitaxial Planar Diodes

SiliconEpitaxialPlanarDiodes HighVoltageSwitchingDiodes

BC846AQB

Marking：F2；Package：DFN1110D-3；65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm

BC846AQB-Q

Marking：F2；Package：DFN1110D-3；65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

BCM846BS

Marking：F2；Package：TSSOP6；NPN/NPN matched double transistor

Generaldescription NPN/NPNmatcheddoubletransistorinaverysmallSOT363(TSSOP6)Surface-MountedDevice(SMD)plasticpackage.Thetransistorsarefullyisolatedinternally. Featuresandbenefits •Currentgainmatching •Base-emittervoltagematching •Drop-inreplacementforstandardd

BCM846BS-Q

Marking：F2；Package：TSSOP6；NPN/NPN matched double transistor

1.Generaldescription NPN/NPNmatcheddoubletransistorinaverysmallSOT363(TSSOP6)Surface-MountedDevice (SMD)plasticpackage.Thetransistorsarefullyisolatedinternally. 2.Featuresandbenefits •Currentgainmatching •Base-emittervoltagematching •Drop-inreplacementfors

BFS19

Marking：F2；Package：SOT23；NPN medium frequency transistor

FEATURES •IC(max)=25mA •VCEO(max)=20V. APPLICATIONS •Mediumfrequencyapplicationsinthickandthin-filmcircuits. DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage.

BQ29704DSER

Marking：F2；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features •Inputvoltagerangepack+:VSS–0.3Vto12V •FETdrive: –CHGandDSGFETdriveoutput •VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) •Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

BQ29704DSET

Marking：F2；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features •Inputvoltagerangepack+:VSS–0.3Vto12V •FETdrive: –CHGandDSGFETdriveoutput •VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) •Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge