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MSP430F2013IPW

丝印:F2013;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件:2.35537 Mbytes 页数:102 Pages

TI

德州仪器

MSP430F2013IPW.B

丝印:F2013;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件:2.35537 Mbytes 页数:102 Pages

TI

德州仪器

MSP430F2013IPWR

丝印:F2013;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件:2.35537 Mbytes 页数:102 Pages

TI

德州仪器

MSP430F2013IPWR.B

丝印:F2013;Package:TSSOP(PW);MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件:2.35537 Mbytes 页数:102 Pages

TI

德州仪器

F2013

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件:38.19 Kbytes 页数:2 Pages

Polyfet

F2013ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: • 20W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Single & Dual Outputs • Efficiency to 86 • Compact 1.6 x 2 In. Case • -40°C to +71°C Operation • Industry Standard Pin-Out • Lowest Cost!!

文件:225.6 Kbytes 页数:2 Pages

MPD

F2013ERW

F2000ERW SERIES

文件:217.73 Kbytes 页数:2 Pages

MPD

详细参数

  • 型号:

    F2013

  • 功能描述:

    16位微控制器 - MCU 16-bit Ultra-Lo-Pwr

  • RoHS:

  • 制造商:

    Texas Instruments

  • 核心:

    RISC

  • 处理器系列:

    MSP430FR572x

  • 数据总线宽度:

    16 bit

  • 最大时钟频率:

    24 MHz

  • 程序存储器大小:

    8 KB 数据 RAM

  • 大小:

    1 KB 片上

  • ADC:

    Yes

  • 工作电源电压:

    2 V to 3.6 V

  • 工作温度范围:

    - 40 C to + 85 C

  • 封装/箱体:

    VQFN-40

  • 安装风格:

    SMD/SMT

供应商型号品牌批号封装库存备注价格
TI(德州仪器)
26+
N/A
360000
原装现货,BOM表可配单提供样品
询价
TI(德州仪器)
24+
TSSOP-14
970
深耕行业12年,可提供技术支持。
询价
TI
23+
SOP
5000
询价
TI
25+
TSSOP14
3000
强调现货,随时查询!
询价
TI
24+
20000
询价
TEXASINSTRU
24+
原封装
1580
原装现货假一罚十
询价
TI
24+
TSSOP
6980
原装现货,可开13%税票
询价
Texas Instruments
20+
TSSOP-14
29860
TI微控制器MCU-可开原型号增税票
询价
TI/德州仪器
24+
65230
询价
TI/德州仪器
23+
NA
2860
原装正品代理渠道价格优势
询价
更多F2013供应商 更新时间2025-12-17 15:18:00