丝印：F2；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：1.20175 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：F2；Package：U-QFN4040-16/SWP；3.8V TO 60V INPUT, 2A LOW IQ SYNCHRONOUS BUCK CONVERTER

Features - VIN 3.8 to 60V - 2A Continuous Output Current - VOUT Adjustable from 0.8V to 50V - Enhanced Efficiency Mode with Bias - Adjustable Switching Frequency. 500kHz Default Frequency - Start-up with Pre-biased Output - External Soft-Start with Tracking – Sequential, Ratiometric, or Ab

文件：2.18029 Mbytes 页数：26 Pages

DIODES

美台半导体

丝印：F2；Silicon Epitaxial Planar Diodes

Silicon Epitaxial Planar Diodes High Voltage Switching Diodes

文件：510.99 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

丝印：F2；Package：DFN1110D-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm

文件：229.4 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：F2；Package：DFN1110D-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to AEC-Q101 and recommended for use in automotive a

文件：230.09 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：F2；Package：TSSOP6；NPN/NPN matched double transistor

General description NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. Features and benefits • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard d

文件：687.56 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：F2；Package：TSSOP6；NPN/NPN matched double transistor

1. General description NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. 2. Features and benefits • Current gain matching • Base-emitter voltage matching • Drop-in replacement for s

文件：237.25 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：F2；Package：SOT23；NPN medium frequency transistor

FEATURES •IC(max) = 25 mA •VCEO(max) = 20 V. APPLICATIONS •Medium frequency applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package.

文件：284.4 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：F2；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features • Input voltage range pack+: VSS – 0.3V to 12V • FET drive: – CHG and DSG FET drive output • Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) • Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 页数：34 Pages

TI

德州仪器

丝印：F2；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features • Input voltage range pack+: VSS – 0.3V to 12V • FET drive: – CHG and DSG FET drive output • Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) • Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 页数：34 Pages

TI

德州仪器