丝印：F2003；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器

丝印：F2003；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器

丝印：F2003；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器

丝印：F2003；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器

丝印：F2003T；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器

丝印：F2003T；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器

丝印：F2003T；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器

丝印：F2003T；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：37.6 Kbytes 页数：2 Pages

POLYFET

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: • 20W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Single & Dual Outputs • Efficiency to 86 • Compact 1.6 x 2 In. Case • -40°C to +71°C Operation • Industry Standard Pin-Out • Lowest Cost!!

文件：225.6 Kbytes 页数：2 Pages

MPD