F2003中文资料Polyfet数据手册PDF规格书
F2003规格书详情
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
Polyfet process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
5Watts Push - Pull
Package Style AQ
HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
产品属性
- 型号：
F2003
- 制造商：
POLYFET
- 制造商全称：
Polyfet RF Devices
- 功能描述：
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
DIP |
39 |
询价 | ||||
TI/德州仪器 |
22+ |
TSSOP14 |
15330 |
原装正品 |
询价 | ||
TI |
20+ |
TSSOP14 |
35830 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
23+ |
31569 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||||
R |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
TI |
25+ |
TSSOP |
9500 |
全新现货 |
询价 | ||
POLYFET |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
FERRAZ/罗兰熔断器 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
询价 | ||
TI/德州仪器 |
23+ |
TSSOP14 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
