NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 60V,ID = 0.115A RDS(ON)

文件：307.25 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：S72；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

文件：91.04 Kbytes 页数：6 Pages

PANJIT

強茂

Small Signal MOSFET

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23

文件：124.95 Kbytes 页数：5 Pages

SECOS

喜可士

N-CHANNEL MOSFET

PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

文件：245.04 Kbytes 页数：3 Pages

SSC

Silicon Standard Corp.

丝印：S72；Package：SOT-23；N Channel Small Signal MOSFET

● DRIVES SWITCHS, RELAYS, SOLENOIDS, LAMPS, DISPLAYS, ETC. ● LOW OFFSET VOLTAGE ● LOW VOLTAGE OPERATION ● EASILY DRIVEN WITHOUT BUFFER

文件：172.91 Kbytes 页数：2 Pages

STANSON

司坦森

丝印：702*；Package：SOT-23；N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

文件：30.9 Kbytes 页数：4 Pages

SUTEX

丝印：7002；Package：SOT-23；MOSFET

FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：1.24227 Mbytes 页数：5 Pages

SY

顺烨电子

丝印：702；Package：SOT-23；SMD Signal DMOS Transistor (N-Channel)

Features • Voltage Controlled Small Signal Switch • High Density Cell Design for Low RDS(ON) • Rugged and Reliable • High Saturation Current Capablity • RoHS Compliance

文件：245.32 Kbytes 页数：7 Pages

TAITRON

丝印：7002；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：619.61 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

Mosfet (N-Channel)

Features ◇ High density cell design for low RDS(ON) ◇ Voltage controlled small signal switch ◇ Rugged and reliable ◇ High saturation current capability

文件：825.43 Kbytes 页数：2 Pages

LUGUANG

鲁光电子