2N7002-CAR

丝印：7002；Package：SOT-23；N-Channel Enhancement Mode Field Effect

TransistorFeatures •HighdensitycelldesignforlowRDS(ON)•Voltagecontrolledsmallsignalswitching•Highsaturationcurrentcapability•Highspeedswitching•-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable

2N7002CK

丝印：LP-；Package：SOT-23；60 V, 0.3 A N-channel Trench MOSFET

Generaldescription ESDprotectedN-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Features ●Logic-levelcompatible ●Veryfastswitching ●TrenchMOSFETtechnology ●ESDprotect

ETC

2N7002D3

N-Channel Enhancement MOSFET

Features VDS=60V,ID=0.32A RDS(ON)=1.6Ω@VGS=10V(Typ.) RDS(ON)=2.0Ω@VGS=4.5V(Typ.) HighPowerandcurrenthandingcapability Leadfreeproductisacquired SurfaceMountPackage MainApplications BatteryProtection LoadSwitch PowerManagement

2N7002DS6

丝印：702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. ESDrating:2200VHBM Halogen-free

2N7002DW

丝印：K72；Package：SOT-363；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •Lo

2N7002DW

Dual N-Channel MOSFET

Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:11ns MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-

2N7002DW

Plastic-Encapsulated Transistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N7002DW

丝印：702；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET

DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re

2N7002DW

丝印：2N；Package：SOT-363；N-Channel Enhancement Mode Field Effect Transistor

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

2N7002DW

OptiMOS??Small-Signal-Transistor

Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21