丝印：72KC；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage General Features ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V)

文件：7.23256 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

文件：286.97 Kbytes 页数：15 Pages

NEXPERIA

安世

60 V, 350 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protecti

文件：176.53 Kbytes 页数：16 Pages

恩XP

丝印：Z8；Package：SOT-883；60 V, single N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFETtechnology ESD protect

文件：667.35 Kbytes 页数：15 Pages

恩XP

丝印：Z8；Package：SC-101；60 V, 450 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec

文件：906 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：0000；Package：SOT883B；60 V, single N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD prote

文件：1.4098 Mbytes 页数：15 Pages

NEXPERIA

安世

60 V, single N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFETtechnology ESD protect

文件：667.35 Kbytes 页数：15 Pages

恩XP

丝印：ZT*；Package：SOT-363；60 V, 300 mA dual N-channel Trench MOSFET

General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET echnology. Features and benefits ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology ● ESD p

文件：384.54 Kbytes 页数：16 Pages

恩XP

丝印：ZT；Package：TSSOP6；60 V, 300 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

文件：298.18 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：ZT；Package：SC-88；60 V, 300 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog

文件：931.08 Kbytes 页数：16 Pages

NEXPERIA

安世