丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：383.82 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Small Signal MOSFET 200 mAmps, 60 Volts

Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • Pb−Free Packages are Available*

文件：92.5 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

N Channel MOSFET ESD Protected 2000V

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：72.58 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

文件：73.25 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers,    Display, Memories, Transistors, etc. • Battery Operated Systems

文件：73.25 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO * RDS(on) = 5 Ω

文件：189.12 Kbytes 页数：1 Pages

DIODES

美台半导体

Plastic-Encapsulate MOSFET

FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

文件：572.01 Kbytes 页数：3 Pages

GWSEMI

唯圣电子